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Characterization of BTI induced variability in scaled Metal Gate / High-K CMOS technologies

By Andreas Kerber

GLOBALFOUNDRIES, Technology Reliability Development, Yorktown Heights, NY, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.