## MOSCNT: code for carbon nanotube transistor simulation

1. IBM 2. University of Florida 3. Intel Corporation

### Reviews

1. 4.0 out of 5 stars

there is an interesting point. by increasing the net temperature (from 150k to 450k) at a constant channel diameter the on-state current (current at 1V gate field) decreases. what’s your opinion about this device’s behavior?

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2. 4.0 out of 5 stars

In the file dufu1.m, the dummy function for electron density ‘n’ is given as: function y = dufu(x,zeta,delta) y = 1./(1+exp(sqrt(x.2+delta.2)-zeta)) – 1./(1+exp(sqrt(x.2+delta.2)+zeta)); To my deduction, the first term comes out. Where is the second term from? With the integral of density of state D(E) by fermi distribution function f(E), I think it should be like this: y = 1./(1+exp(sqrt(x.2+delta.2)-zeta)); Any clue? Thanks a lot.

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3. 2.0 out of 5 stars

got some error messages

??? Error using ==> trapz at 54
X must be a vector.

Error in ==> CNTCurrContinuity at 19
I_continu = (4*q^2/(2*pi*h_bar)).*trapz(myEE_new,Trraspr_new);

Error in ==> MOSCNT_main at 63
I_continuity(:,ii_vg,ii_vd) = CNTCurrContinuity(myEE,Trraspr); %% determine current continuity

Who knows how to solve it?

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4. Igor Bazhin

3.0 out of 5 stars

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5. 4.0 out of 5 stars

Hello When I launch programs MOSCNT; I find a mistake, because it gives me I_continuity =

Help me to trace the curve ids-VG Please help me Thank you

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6. 4.0 out of 5 stars

Hello When I launch programs MOSCNT; I find a mistake, because it gives me I_continuity =

Help me to trace the curve ids-VG Please help me Thank you

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