Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green's function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs. Additional information on the device geometry and the simulation procedure is described in . The code can readily simulate band-to-band tunneling in CNT-MOSFETs, as well as p-i-n type device architectures, by appropriately modifying the source/drain doping conditions [2,3].
For the explanation of the simulation procedure, see the article "Towards Multiscale Modeling of Carbon Nanotube Transistors," by Guo, Datta, Lundstrom, and Anantram.
Originally created by Jing Guo (Purdue University), 2003. Revised by Siyu Koswatta (Purdue University) and Dmitri Nikonov (Intel), 2004.
Copyright of all codes contained in this archive by Purdue Research Foundation, 2003. See attached license which governs distribution, copying and modification.
Cite this work
Researchers should cite this work as follows:
Please cite the following publications when using this code to obtain any results you intend to publish:
- J. Guo, S. Datta, M.S. Lundstrom and M.P. Anantram, "Towards Multiscale Modeling of Carbon Nanotube Transistors," International J. on Multiscale Computational Engineering, special issue on multiscale methods for emerging technologies, ed. N. Aluru, 2, 257-276, 2004.
- S. O. Koswatta, M. S. Lundstrom, M. P. Anantram, and D. E. Nikonov, "Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors," Appl. Phys. Lett., 87, 253107, 2005.
- S. O. Koswatta, D. E. Nikonov, and M. S. Lundstrom, "Computational study of carbon nanotube p-i-n tunnel FETs," IEEE IEDM Tech. Digest, pp. 518, 2005.