Time-dependent gate oxide breakdown Lab

By Xin Jin1, Muhammad Ashraful Alam2, Muhammad Masuduzzaman1, Sang Hoon Shin1, Sambit Palit1

1. Purdue University 2. Lucent Technologies

Simulate Time-dependent gate oxide breakdown

Launch Tool

You must login before you can run this tool.

Version 1.0 - published on 20 Jan 2015

doi:10.4231/D3JD4PQ3W cite this

This tool is closed source.

View All Supporting Documents




Published on


Polymer based dielectric materials have potential applications in micro-electronics, power electronics, photovoltaics, flexible electronics, MEMS and sensing industries. The possibility of premature electrical breakdown due to high electric fields, especially at high frequencies and in high ambient temperature and humidity conditions, has restricted its widespread adoption. In this simulation, we establish dielectric heating as the primary AC degradation mechanism in polymers, and develop an analytical dielectric breakdown model that satisfactorily explains measured trends in constant and ramp stress tests under both AC and DC electric fields. Our study provides a fundamental physical understanding of the frequency,and thickness dependences of lifetime and breakdown strength for polymer dielectrics. The proposed breakdown model suggests far more optimistic prospects when accelerated test results are scaled to normal operating conditions.

This TDDB nanohub tool can simulate the following four structures:

  • Thick Dielectric
  • Single Thin Capacitor
  • Series Thin Capacitors
  • Ferroelectric BD


Palit, Sambit, and Muhammad Ashraful Alam. “Electrical breakdown in polymers for BEOL applications: Dielectric heating and humidity effects.” Reliability Physics Symposium, 2014 IEEE International. IEEE, 2014.

Muhammad Alam (2013), "ECE 695A Lecture 21: Introduction to Dielectric Breakdown," https://nanohub.org/resources/17027.

Muhammad Alam (2013), "ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown," https://nanohub.org/resources/17028.

Muhammad Alam (2013), "ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB," https://nanohub.org/resources/17291.

Cite this work

Researchers should cite this work as follows:

  • Xin Jin, Muhammad Ashraful Alam, Muhammad Masuduzzaman, Sang Hoon Shin, Sambit Palit (2015), "Time-dependent gate oxide breakdown Lab," https://nanohub.org/resources/tddb. (DOI: 10.4231/D3JD4PQ3W).

    BibTex | EndNote