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Assessing the MVS Model for Nanotransistors

By Siyang Liu1, Xingshu Sun1, Mark Lundstrom1

1. Purdue University

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The MIT Virtual Source model [1] is a recently developed compact model for nanoscale transistor. It is a semi-empirical model based on the physics of electron transport at nanoscale. The model requires only a few input parameters, most of which can be obtained from experimental data. This model produces an accurate result as well as maintains simplicity.


[1] A. Khakifirooz, O. M. Nayfeh, and D. Antoniadis, "A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters," Electron Devices, IEEE Transactions on, vol. 56, pp. 1674-1680, 2009.
[2] L. Xin, W. Weimin, A. Jha, G. Gildenblat, R. van Langevelde, G. D. J. Smit, et al., "Benchmark Tests for MOSFET Compact Models With Application to the PSP Model," Electron Devices, IEEE Transactions on, vol. 56, pp. 243-251, 2009.

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Researchers should cite this work as follows:

  • Siyang Liu; Xingshu Sun; Mark Lundstrom (2014), "Assessing the MVS Model for Nanotransistors,"

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