This presentation describes the growth of (Si,Ge & SiGe) thin films on Si and Ge (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD). Thin films were characterized structurally by conventional and high-resolution transmission electron microscopy (TEM) and optically by photoluminescence (PL) spectroscopy. The evolution of surface morphology was monitored via atomic force microscopy (AFM).The emphasis was on the determination of criteria for the two to three dimensional growth transition, of interest for multilayer stack growth and the synthesis of quantum dot structures.
We wish to acknowledge the assistance of the following individuals:
(Air Force Research Laboratory)::
T. Crumbaker, L. Henry - thin film growth
K. Vaccaro - photoluminescence spectroscopy
P. Yip - atomic force microscopy
(MIT Lincoln Laboratory):
P. Nitishin - high-resolution transmission electron microscopy
This work was supported by a U.S. Air Force Palace Knight Fellowship.
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