Schred

By Dragica Vasileska1; Shaikh S. Ahmed2; Gokula Kannan1; Matteo Mannino3; Gerhard Klimeck3; Mark Lundstrom3; Akira Matsudaira4; Junzhe Geng3

1. Arizona State University 2. Southern Illinois University Carbondale 3. Purdue University 4. University of Illinois at Urbana-Champaign

SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

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Version 2.56 - published on 25 Nov 2022

doi:10.21981/F0YY-8M97 cite this

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Abstract

Schred calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide-Semiconductor) structure and a typical SOI (semiconductor-Oxide_Insulator) structure by solving self-consistently the one-dimensional (1D) Poisson equation and the 1D Schrodinger equation.

To better understand the operation of SCHRED tool and the physics of MOS capacitors please refer to:

Publications

Gokula Kannan, Dragica Vasileska, “Schred V2.0 - Tool to model MOS Capacitors”, 14th International Workshop on Computational Electronics (IWCE), pp.1-4, Dec. 2010

Cite this work

Researchers should cite this work as follows:

  • D. Vasileska, D. K. Schroder and D.K. Ferry, “Scaled silicon MOSFET’s: Part II - Degradation of the total gate capacitance”, IEEE Trans. Electron Devices 44, 584-7 (1997).

  • Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng (2022), "Schred," https://nanohub.org/resources/schred. (DOI: 10.21981/F0YY-8M97).

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