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Schred
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
Version 2.56 - published on 25 Nov 2022
doi:10.21981/F0YY-8M97 cite this
This tool is closed source.
Citations Non-affiliated (123) | Affiliated (15)
Non-affiliated authors
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- Chen-Han Chou, Yu-Hong Lu, Yi-He Tsai, An-Shih Shih, Wen-Kuan Yeh, Chao-Hsin Chien, (2018), "Incorporating Yttrium Into A GeO Interfacial Layer With HfO2-Based Gate Stack On Ge", ECS Journal Of Solid State Science And Technology, The Electrochemical Society, 7, 2: pg: N15-N19, (DOI: 10.1149/2.0161802jss)
- Gokula Thulasingam, (2017), "The Role Of The Collisional Broadening Of The States On The Low-field Mobility In Silicon Inversion Layers", : pg: 1-124
- R Zhang, Junkang Li, Xiao Yu, (2017), "Electrical Properties Of Ge PMOSFETs With Ultrathin EOT HfO 2/AlO X/GeO X Gate-Stacks And NiGe Metal Source/Drain", IEEE Transactions on Electron Devices, 64, 12: pg: 4831-4837, (DOI: 10.1109/TED.2017.2761885)
- Slah Hlali, Neila Hizem, Adel Kalboussi, (2017), "Charge Density At The Al2O3/Si Interface In Metal-Insulator-Semiconductor Devices: Semiclassical And Quantum Mechanical Descriptions", Physics and Technology of Semiconductors, 51, 12: pg: 1682-1689
- Gokula Kannan, D. Vasileska, (2017), "The Impact Of Surface-roughness Scattering On The Low-field Electron Mobility In Nano-scale Si MOSFETs", Journal of Applied Physics, 122: pg: 114303-1-114303-11, (DOI: 10.1063/1.5003253)
- Sarkar Anwar, William Vandenberghe, Gennadi Bersuker, Dmitry Veksler, Giovanni Verzellesi, Luca Morassi, Rohit Galatage, Sumit Jha, Creighton Buie, Adam Barton, Eric Vogel, Christopher Hinkle, (2017), "Comprehensive Capacitance-Voltage Simulation And Extraction Tool Including Quantum Effects For High-k On SixGe1-x And InxGa1-xAs: Part I-Model Description and Validation", IEEE Transactions on Electron Devices, : pg: 1-8, (DOI: 10.1109/TED.2017.2725645)
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- Ming-Li Tsai, Jun-Yu Ko, Shin-Yuan Wang, Chao-Hsin Chien, (2016), "Interface Characterization Of HfO\2)/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness By Using Hydrogen Plasma Treatment", IEEE Transactions on Electron Devices, : pg: 1-7, 0018-9383, (DOI: 10.1109/TED.2016.2587902)
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- Tamara Rudenko, A. Nazarov, Valeriya Kilchytska, Denis Flandre, (2016), "A Review Of Special Gate Coupling Effects In Long-channel SOI MOSFETs With Lightly Doped Ultra-thin Bodies And Their Compact Analytical Modeling", Electronics, 117: pg: 66-76, 0038-1101, (DOI: 10.1016/j.sse.2015.11.017)
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- Tamara Rudenko, Valeriya Kilchytska, Maher Md Arshad, J.-P. Raskin, A. Nazarov, Denis Flandre, (2011), "On The MOSFET Threshold Voltage Extraction By Transconductance And Transconductance-to-Current Ratio Change Methods: Part II-Effect Of Drain Voltage", Electron Devices, IEEE Transactions On, IEEE, 58, 12: pg: 4180-4188, (DOI: 10.1109/TED.2011.2168227)
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- Ming-Jer Chen, Chien-Chih Lee, Kuan-Hao Cheng, (2011), "Hole Effective Masses as a Booster of Self-Consistent Six-Band k*p Simulation in Inversion Layers of pMOSFETs", IEEE Transactions on Electron Devices, 58, 4: pg: 931-937, 02, 0018-9383, (DOI: 10.1109/TED.2011.2105271)
- Ming-Jer Chen, Sou-Chi Chang, Shin-Jiun Kuang, Chien-Chih Lee, Wei-Han Lee, Kuan-Hao Cheng, Yi-Hsien Zhan, (2011), "Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n+-Polysilicon Ultrathin Gate Oxide nMOSFETs", IEEE Transactions on Electron Devices, 58, 4: pg: 1038-1044, 02, 0018-9383, (DOI: 10.1109/TED.2011.2107519)
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- Ishtiaq Ahsan, Dieter Schroder, Edward Nowak, Oleg Gluschenkov, Noah Zamdmer, Ronald Logan, (2009), "Impact of intra-die thermal variation on accurate MOSFET gate-length measurement", IEEE/semi Advanced Semiconductor Manufacturing Conference, 2009, IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2009, : pg: 174-177, IEEE, 05, 978-1-4244-3614-9, (DOI: 10.1109/ASMC.2009.5155978)
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Affiliated authors
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