Schred

Calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure

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Archive Version 2.2
Published on 22 Aug 2008 All versions

doi:10.4231/D3QR4NQ20 cite this

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Abstract

Schred calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and the 1D Schrodinger equation. To better understand the operation of SCHRED tool and the physics of MOS capacitors please refer to:
  • MOS Capacitors Operation Description
  • How Quantum-Mechanical Space-Quantization is Implemented in SCHRED, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
  • SCHRED - Exercise 1
  • SCHRED - Exercise 2
  • SCHRED - Exercise 3

    • Cite this work

    Researchers should cite this work as follows:

    • D. Vasileska, D. K. Schroder and D.K. Ferry, “Scaled silicon MOSFET’s: Part II - Degradation of the total gate capacitance”, IEEE Trans. Electron Devices 44, 584-7 (1997).

    • Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Akira Matsudaira, Gerhard Klimeck, Mark Lundstrom (2022), "Schred," https://nanohub.org/resources/schred. (DOI: 10.4231/D3QR4NQ20).

      BibTex | EndNote

    Tags

    1. ABACUS
    2. ACUTE
    3. AQME
    4. microelectronics
    5. MOS
    6. nanoelectronics
    7. nanotransistors
    8. open source tool
    9. quantum