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Schred
SCHRED simulation software calculates the envelope wave functions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
Launch Tool
Archive Version 2.3
Published on 30 Sep 2010 All versions
doi:10.4231/D3G15TB1M cite this
This tool is closed source.
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Abstract
Schred calculates the envelope wave functions and the
corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor)
or SOS (Semiconductor-Oxide-Semiconductor) structure and a typical SOI (Semiconductor-Oxide_Insulator)
structure by solving self-consistently the one-dimensional (1D) Poisson
equation and the 1D Schroedinger equation.
MOS Capacitors: Theory and Modeling
How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
Schred - Exercise 1
Schred - Exercise 2
Schred - Exercise 3
The source code of Schred has been attached as a file name "src.zip" and can be found under the Supporting Documents tab.
- Quantum Size Effects and the Need for Schred
- Schred Tutorial Version 2.1 - Schred User Manual (with Rappture Interface)
- Schred Tutorial (for command-line operation)
Publications
Gokula Kannan, Dragica Vasileska, “Schred V2.0 - Tool to model MOS Capacitors”, 14th International Workshop on Computational Electronics (IWCE), pp.1-4, Dec. 2010
Cite this work
Researchers should cite this work as follows:
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D. Vasileska, D. K. Schroder and D.K. Ferry, “Scaled silicon MOSFET’s: Part II - Degradation of the total gate capacitance”, IEEE Trans. Electron Devices 44, 584-7 (1997).