Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

By Aryan Afzalian1, Jun Huang2, Hesameddin Ilatikhameneh2, Santiago Alonso Perez Rubiano2, Tillmann Christoph Kubis2, Michael Povolotskyi2, Gerhard Klimeck2

1. TSMC 2. Network for Computational Nanotechnology, Purdue University, West Lafayette, IN

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Abstract

IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported in the literature. nevertheless, we demonstrate here the possibility to clean iii-v mode space basis from the unphysical modes and achieve a significant speed up ratio (>: ; 150×: ; ), while keeping a very good accuracy (relative error lower than 1%) when using the algorithm for negf transport studies. such results demonstrate the potential of mode space tight binding models and offer unprecedented possibilities for the full band simulation of nanostructures.

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Researchers should cite this work as follows:

  • Aryan Afzalian; Jun Huang; Hesameddin Ilatikhameneh; Santiago Alonso Perez Rubiano; Tillmann Christoph Kubis; Michael Povolotskyi; Gerhard Klimeck (2015), "Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs," https://nanohub.org/resources/23094.

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North Ballroom, PMU, Purdue University, West Lafayette, IN

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