Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

By Aryan Afzalian1; Jun Huang2; Hesameddin Ilatikhameneh2; Santiago Alonso Perez Rubiano2; Tillmann Christoph Kubis2; Michael Povolotskyi2; Gerhard Klimeck2

1. TSMC 2. Network for Computational Nanotechnology, Purdue University, West Lafayette, IN

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Abstract

IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported in the literature. nevertheless, we demonstrate here the possibility to clean iii-v mode space basis from the unphysical modes and achieve a significant speed up ratio (>: ; 150×: ; ), while keeping a very good accuracy (relative error lower than 1%) when using the algorithm for negf transport studies. such results demonstrate the potential of mode space tight binding models and offer unprecedented possibilities for the full band simulation of nanostructures.

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IWCE 2015

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Researchers should cite this work as follows:

  • Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck (2015), "Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs," https://nanohub.org/resources/23094.

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North Ballroom, PMU, Purdue University, West Lafayette, IN

Tags

  1. III-V materials/devices
  2. nanoelectronics
  3. nanowires
  4. NEGF