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Resonant Tunneling Diode Simulator

Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport

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Archive Version 1.0
Published on 10 Oct 2005, unpublished on 05 Dec 2007
Latest version: 1.2w. All versions

doi:10.4231/D3FQ9Q49N cite this

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Heterostructure devices have thin layers of alternating materials. Some layers act as barriers to electron flow, but if the layers are thin enough, electrons can "tunnel" through them. If two or more barriers are placed closely together, electrons can reflect between the barriers and resonate at particular energies, allowing complete transmission through the barriers, as if they were not there! This gives rise to negative differential resistance--current that goes down as voltage goes up--an interesting behavior that can be harnessed to form new devices.

Use this tool to explore the effects of tunneling through one or more material layers. Change the doping density, material properties, and layer thicknesses, and examine transmission coefficients and current-voltage relationships.

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SEQUAL 2.1 is a device simulation program that computes Semiconductor Electrostatics by Quantum Analysis. Given a device, SEQUAL will compute the electron density and the current density using a quantum mechanical, collisionless description of electron propagation. SEQUAL is based on the formulation of M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom, "Importance of Space-Charge Effects in Resonant Tunneling Devices," Applied Physics Letters, vol. 50 (10), pp. 612-614, 1987.

Cite this work

Researchers should cite this work as follows:

  • (2015), "Resonant Tunneling Diode Simulator," (DOI: 10.4231/D3FQ9Q49N).

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.