Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model

By Morteza Gholipour1, Ying-Yu Chen2, Deming Chen2

1. Babol University of Technology 2. University of Illinois at Urbana-Champaign

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Abstract

SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

Publications

Y-Y. Chen, M. Gholipour, and D. Chen, “Flexible Transition Metal Dichalcogenide Field-Effect Transistors: A Circuit-Level Simulation Study of Delay and Power under Bending, Process Variation, and Scaling,” IEEE/ACM Asia and South Pacific Design Automation Conference, Jan. 2016.

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Researchers should cite this work as follows:

  • Morteza Gholipour; Ying-Yu Chen; Deming Chen (2016), "Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model," https://nanohub.org/resources/23426.

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