IWCE 2015 invited presentation. The placement of two dimensional (2D) materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenide (TMDC) at the forefront of materials and device research was pioneered by the discovery of graphene, an atomically thin 2D allotrope of carbon obtained through mechanical exfoliation. These 2D materials possess a wide range of electronic behaviors from insulator to metallic, resulting from their in-plane strong covalent bonds and their weaker out-of-plane coupling. The intrinsic bandgap of the semiconducting TMDCs makes them materials of choice for next-generation low-dimensional optical and electronic devices for defense and civilian applications. These 2D van der Waal (vdW) materials hold promise for a range of electronic, thermoelectric and optoelectronic devices such as field effect transistor (FET), light emitting device (LED), energy harvesting devices and ultrafast optical devices.
This work was supported by grants of computer time from the DOD High Performance Computing Modernization Program at the U.S. Air Force Research Laboratory and U.S. Army Engineer Research and Development Center DoD Supercomputing Resource Centers. This work is supported in part by the NSF Grant No. 1307671, FAME, one of six centers of STARnet, a SRC program sponsored by MARCO and DARPA, and a U.S. Dept. of Education GAANN Fellowship. This work used the resources at XSEDE (NSF Grant no: OCI-1053575) and Purdue University.
Cite this work
Researchers should cite this work as follows:
Raj Neupane, Mahesh, "Electronic and vibrational properties of 2D materials from monolayer to bulk," in Computational Electronics (IWCE) 2015 International Workshop on, DOI: 10.1109/IWCE.2015.7301978
North Ballroom, PMU, Purdue University, West Lafayette, IN