This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Multi-State Extended Non-radiative Multi-phonon Model (a,k.a Multi-State-Model)". The simulator can calculate threshold voltage shift due to hole trapping and detrapping during and after DC stress and during AC stress.
The zip file contains setup instructions (setup guide) and model specific instructions (readme), besides the C based code (executable), input deck and example files and plots. You are advised to read the setup and readme files before installation and running the simulator.
You have to install Gnuplot 5.0.4 and Notepad++, refer to setup guide for more details.
- T. Grasser, "Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities", Microelectronic. Rel., vol. 52, no. 1, pp. 39-70, Jan. 2012.,DOI: 10.1016/j.microrel.2011.09.002
- W.Goes et al. ,“Advanced Modeling of Oxide Defects,” in Bias Temperature Instability for Devices and Circuits,T.Grasser ,Ed.,1st ed., New York:Springer-Verlag,2014, ch.16,pp. 409-446
- T. Grasser, B. Kaczer and W. Goes, "An energy-level perspective of bias temperature instability", 2008 IEEE International Reliability Physics Symposium, Phoenix, AZ, 2008, pp.28-38 , DOI: 10.1109/RELPHY.2008.4558859
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