NEMO5 and 2D Materials: Tuning Bandstructures, Wave Functions and Electrostatic Screening

By Tillmann Christoph Kubis

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Abstract

The successful isolation of graphene in 2004 opened up the exciting new research field of 2D materials. These materials host a long list of unique mechanical, electrical and chemical features that promise important device applications. Reliable performance predictions of 2D nanodevices must embrace coherent quantum mechanical effects (tunneling, confinement and interferences) atomistic effects (corrugation, subatomic confinement) and incoherent effects (phonon scattering and device imperfections). Subatomic resolution is needed, but techniques must be efficient enough to model real-size devices. Recently, the multipurpose simulation tool NEMO5 was augmented with the maximally localized Wannier function (MLWF) representation. This representation offers a good balance between numerical efficiency and subatomic resolution. MLWF parameterizations are highly transferable and free from ambiguities that have plagued empirical tight binding models.

In this talk, I will briefly discuss the MLWF approach and compare it to DFT and atomistic tight binding. Initial results using the MLWF approach for 2D material based devices will be discussed and compared to experiments. These results unveil systematic band structure changes as functions of the layer thickness and the applied gate potential. The electrostatic response depends on the location of the band edges in the Brillouin zone, their degeneracy and associated wavefunctions. All these properties turn out to be tunable. Scattering rates, mobilities and density of states are tightly bound to such band structure details as well. Even the bandgap is a function of the layer thickness and the applied electric field. Fitting NEMO5’s gate control of bandgaps to experimental data allows us to deduce the layer thickness dependence of the dielectric constant in the 2D materials. The enhancements discussed in this talk provide NEMO5 with the new capabilities needed to play an important role in the exploration of novel 2D devices.

Bio

Tillmann Kubis graduated to PhD at the Technical University Munich (Germany) in theoretical semiconductor physics in 2009. He is currently a Research Assistant Professor in the Network for Computational Nanotechnology at Purdue University. His work includes development and implementation of new algorithms for general quantum transport within the nonequilibrium Green’s function method. His algorithms are published in the academic open source semiconductor nanodevice modeling tool NEMO5. This code is used among many academic and industrial groups including Intel, Samsung, Lumileds, and TSMC. His research currently addresses electron and phonon transport, transport-ready Hamiltonian extraction from density functional theory methods, spin transport with topological insulators and design optimizations of terahertz quantum cascade lasers and nitride based light emitting diodes.

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Cite this work

Researchers should cite this work as follows:

  • Tillmann Christoph Kubis (2016), "NEMO5 and 2D Materials: Tuning Bandstructures, Wave Functions and Electrostatic Screening," https://nanohub.org/resources/25114.

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Time

Location

Room 2001, Birck Nanotechnology Center, Purdue University, West Lafayette, IN

Tags

NEMO5 and 2D Materials: Tuning Bandstructures, Wave Functions and Electrostatic Screening
  • NEMO5 and 2D materials: tuning bandstructures, wave functions and electrostatic screening 1. NEMO5 and 2D materials: tuning… 0
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  • Why 2D materials excite so much attention 2. Why 2D materials excite so muc… 39.406072739406078
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  • Why 2D materials excite so much attention 3. Why 2D materials excite so muc… 124.82482482482483
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  • Known 2D materials 4. Known 2D materials 187.72105438772107
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  • Applications of TMDs 5. Applications of TMDs 264.16416416416416
    00:00/00:00
  • Open questions in TMDs: Band offsets 6. Open questions in TMDs: Band o… 297.997997997998
    00:00/00:00
  • Open questions in TMDs 7. Open questions in TMDs 340.77410744077412
    00:00/00:00
  • Open questions in TMDs 8. Open questions in TMDs 395.92926259592929
    00:00/00:00
  • Open questions in TMDs 9. Open questions in TMDs 469.80313646980318
    00:00/00:00
  • NEMO5:multipurpose nanodevice simulation tool 10. NEMO5:multipurpose nanodevice … 550.950950950951
    00:00/00:00
  • Maximally localized Wannier functions in NEMO5 11. Maximally localized Wannier fu… 612.1788455121789
    00:00/00:00
  • Method details 12. Method details 697.96463129796462
    00:00/00:00
  • Example: MLWFs for MoS2 13. Example: MLWFs for MoS2 849.98331664998329
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  • TB vs. MLWF: Transferability 14. TB vs. MLWF: Transferability 952.585919252586
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  • TB vs. MLWF: MoS2/WTe2 interface 15. TB vs. MLWF: MoS2/WTe2 interfa… 1077.0770770770771
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  • MLWF interface example: MoS2/WSe2 16. MLWF interface example: MoS2/W… 1143.5101768435102
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  • Bandstructure and wave function results 17. Bandstructure and wave functio… 1181.8485151818486
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  • Results: Bandstructure and Brillouin zone 18. Results: Bandstructure and Bri… 1188.8221554888221
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  • Results: Bandstructure and Brillouin zone 19. Results: Bandstructure and Bri… 1257.0904237570906
    00:00/00:00
  • Results: Impact of layer thickness 20. Results: Impact of layer thick… 1288.6553219886553
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  • Results: Conduction band wave functions 21. Results: Conduction band wave … 1311.0777444110779
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  • Results: wave functions with gate field 22. Results: wave functions with g… 1339.0056723390057
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  • Results: Wave functions for valence band 23. Results: Wave functions for va… 1361.0610610610611
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  • Device results 24. Device results 1402.4691358024693
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  • Experiment: open question 25. Experiment: open question 1404.2042042042042
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  • Results: Fermi level vs. layer thickness 26. Results: Fermi level vs. layer… 1442.9095762429097
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  • MoTe2 resolving valence band 27. MoTe2 resolving valence band 1514.4477811144479
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  • Results: Band gap changes 28. Results: Band gap changes 1632.4991658324993
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  • Layer dependent gate response 29. Layer dependent gate response 2229.92992992993
    00:00/00:00
  • ML/BL transport(IV) 30. ML/BL transport(IV) 2389.456122789456
    00:00/00:00
  • ML/BL transport (interline states) 31. ML/BL transport (interline sta… 2432.8661995328662
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  • Ongoing model development 32. Ongoing model development 2532.3656990323657
    00:00/00:00
  • TMD p-n junctions and TFETs 33. TMD p-n junctions and TFETs 2536.3697030363696
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  • Vacancies in 2D materials 34. Vacancies in 2D materials 2623.1231231231232
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  • Defect scattering potential for missing S 35. Defect scattering potential fo… 2697.4974974974975
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  • Corrugation scattering 36. Corrugation scattering 2727.0270270270271
    00:00/00:00
  • Scattering on phonons 37. Scattering on phonons 2883.6503169836506
    00:00/00:00
  • Efficient algorithm for nonlocal scattering 38. Efficient algorithm for nonloc… 2969.5695695695695
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  • Summary 39. Summary 3064.3643643643645
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  • Thank you! 40. Thank you! 3205.7057057057059
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