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2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures
Archive Version 1.0
Published on 28 Mar 2007, unpublished on 19 Mar 2009 All versions
Cite this work
Researchers should cite this work as follows:
If you are using the tool for any publication, we request that you cite:
- B. Winstead and U. Ravaioli, “A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation,” IEEE Trans. Electron Devices, vol. 50, pp. 440–446, Feb., 2003.
- G. Kathawala, M. Mohamed, and U. Ravaioli, “Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation “, Journal of Computational Electronics, Vol. 2, pp. 85-89, 2004.
- Simulations were performed by MOCA on http://nanohub.org