2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.0
Published on 28 Mar 2007, unpublished on 19 Mar 2009 All versions



Published on


MOCA is a full-band Monte Carlo Simulator code developed at the University of Illinois. This version is suitable for 2D simulation of silicon devices. Quantum correction approach to account for size quantization in narrow channels has been adopted.


Computational Electronics Group, University of Illinois at Urbana-Champaign. This work was funded by NSF.


  • Monte Carlo Device Simulation: Full Band and Beyond by Karl Hess, Kluwer Academic Publishers, 1991.
  • Cite this work

    Researchers should cite this work as follows:

    • If you are using the tool for any publication, we request that you cite:

      1. B. Winstead and U. Ravaioli, “A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation,” IEEE Trans. Electron Devices, vol. 50, pp. 440–446, Feb., 2003.
      2. G. Kathawala, M. Mohamed, and U. Ravaioli, “Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation “, Journal of Computational Electronics, Vol. 2, pp. 85-89, 2004.
      3. Simulations were performed by MOCA on
    • (2014), "MOCA,"

      BibTex | EndNote