In this activity, students use the PN Junction Lab simulation tool in ABACUS on nanoHUB to simulate different p-i-n or p-n diode structures. Plots of hole concentration and electric field as a function of position, along with the gand structure with and without applied bias, will be simulated and used to evaluate the operation of these diodes.
This activity is adapted from an assignment used in MSE304 at the University of Illinois, Urbana-Champagne.
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Researchers should cite this work as follows:
- PN Junction Lab
- Simulation Powered Learning Activity
- computational materials science