Electron Transport in Schottky Barrier CNTFETs

By Igor Bejenari

Technische Universitat Dresden

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Abstract

A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The  probability of electrons to tunnel through the SB is obtained in the framework of both non-parabolic two-band  and parabolic one-band approximation. The electron transmission probability for non-ballistic SB-CNTFETs is shortly discussed.

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Researchers should cite this work as follows:

  • Igor Bejenari (2017), "Electron Transport in Schottky Barrier CNTFETs," https://nanohub.org/resources/27514.

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