With the development of advanced processing technology, electron‐beam lithography (EBL) is a key enabling tool for nanoscience and nanofabrication. At Birck Nanotechnology Center (BNC), a lot of research, such as MOSFET, metamaterials, photonics, and NEMS, rely heavily on EBL to prove research concepts and carry out fundamental science. Recently, BNC installed the JEOL‐8100 EBL system in its cleanroom. It has a minimum beam diameter of 5.4 nm at 1,000 um x 1,000 um field size with maximum scan speed of 125MHz. In this talk, I will focus on doses for different EBL resists, stitching errors and alignment considerations. I will also highlight some common user mistakes and what can be done to prevent them.
Yi Xuan received his B.S. degree in Applied Chemistry from East China University of Science and Technology, and Ph.D. degree in Inorganic Materials from Tokyo Institute of Technology. He joined Purdue University in 2005 as a post‐doctoral researcher and has been working on various projects in the field of nanofabrication, nano‐CMOS and nano‐photonics etc. He has authored and co‐authored more than 100 publications with 5000+ citations. He is currently a Research Assistant Professor at Birck Nanotechnology Center and a member of IEEE and OSA.
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Room 1001, Birck Nanotechnology Center, Purdue University, West Lafayette, IN