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The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors

By Dave Lyzenga

Calvin College

Published on


In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward fabrication. The capacitances associated with the physical geometry of the porous anodic alumina (PAA)-based CNTFET are explored and developed into a parametric equation for the unity current gain frequency (fT) of the device. Comparisons are drawn between predicted vertical CNTFET characteristics and those of an ideal, back-gated counterpart in the areas of unity current gain frequency and current density.


Electrical Engineering Student,
Calvin College

Undergraduate Researcher,
Purdue University


Advisor: Prof. Tim Fisher

Sponsored by

NASA Institute for Nanoelectronics and Computing and NSF Network for Computating Nanotechnology under NASA grant no. NCC 2-1363 and NSF grant no. EEC-0228390.

Cite this work

Researchers should cite this work as follows:

  • Dave Lyzenga (2007), "The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors," https://nanohub.org/resources/3044.

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