09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
14 Oct 2020 | Online Presentations | Contributor(s): Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
21 Sep 2020 | Online Presentations | Contributor(s): Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
30 Hydrogen-Terminated diamond FET and GaN HEMT delivering CMOS Inverter Operation at High-Temperature
21 Sep 2020 | Online Presentations | Contributor(s): Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury
Day 2 Session 3.4Introduction: An increasing number of applications in power electronics, sensor signal conditioning, and RF communication are demanded to operate beyond 200°C (e.g., engine and geothermal wellbore monitoring). These applications require integrated circuits such as...
39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
21 Sep 2020 | Online Presentations | Contributor(s): Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly
This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...
A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics
18 Sep 2020 | Online Presentations | Contributor(s): Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser
We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...
05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations
18 Sep 2020 | Online Presentations | Contributor(s): Shimeng Yu, Panni Wang
Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...
12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications
18 Sep 2020 | Online Presentations | Contributor(s): E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl
In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns .
47 Electrostatic Engineering in BaTiO3/β-Ga2O3 Heterostructure Field Effect Transistors
14 Oct 2020 | Online Presentations | Contributor(s): Nidhin Kurian Kalarickal, Zhanbo Xia, Wyatt Moore, Joe McGlone, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan
We report on the design and demonstration of BaTiO3/β-Ga2O3 based lateral field effect transistors with superior breakdown performance. Utilizing the high-k low-k dielectric interface allows significant improvement in electrostatic field management giving a breakdown voltage of 1.1 KV at 5...