DRC202 Device Research Conference Technical Presentations

By Siddharth Rajan (editor)1, Zhihong Chen (editor)2, Becky (R. L.) Peterson3

1. Electrical and Computer Engineering, Ohio State University, Columbus, OH 2. Electrical and Computer Engineering, Purdue University, West Lafayette, IN 3. Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI



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For over seven decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marked the 78th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions were highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

The 2020 Conference featured:

  • Informative, timely short courses in rapidly developing fields
  • Oral and poster presentations on electronic/photonic device experiments and simulations
  • Plenary and invited presentations given by worldwide leaders
  • Evening “rump” session—Tuesday, June 23
  • Strong student participation and Student Paper Awards

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Researchers should cite this work as follows:

  • Siddharth Rajan, Zhihong Chen, Becky (R. L.) Peterson (2020), "DRC202 Device Research Conference Technical Presentations," https://nanohub.org/resources/34239.

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DRC 2020 Virtual Conference


In This Series

  1. 09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE

    14 Oct 2020 | Online Presentations | Contributor(s): Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan

    We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.

  2. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

    21 Sep 2020 | Online Presentations | Contributor(s): Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

    The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

  3. 30 Hydrogen-Terminated diamond FET and GaN HEMT delivering CMOS Inverter Operation at High-Temperature

    21 Sep 2020 | Online Presentations | Contributor(s): Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury

    Day 2 Session 3.4Introduction: An increasing number of applications in power electronics, sensor signal conditioning, and RF communication are demanded to operate beyond 200°C (e.g., engine and geothermal wellbore monitoring). These applications require integrated circuits such as...

  4. 39 Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed

    21 Sep 2020 | Online Presentations | Contributor(s): Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly

    This study is the first-time analysis of heating and cooling timescales together demonstrating voltage as well as frequency scaling for different voltage regimes w.r.t. different device stacks. Thus, an electro-thermal speed engineering study is critical for RRAM devices to model elements of...

  5. A3 Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

    18 Sep 2020 | Online Presentations | Contributor(s): Yury Yuryevich Illarionov, A.G. Banshchikov, Theresia Knobloch, D.K. Polyushkin, S. Wachter, V.V. Fedorov, M. Stöger-Pollach, M.I. Vexler, N.S. Sokolov, T. Grasser

    We fabricated high-quality crystalline 1−2nm CaF2 films and successfully used them for MoS2 FETs with record-thin gate insulators. For the first time we demonstrated MoS2 FETs with simultaneously sub-1nm EOT insulators and sub-100nm channel length and found that these devices can exhibit...

  6. 05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations

    18 Sep 2020 | Online Presentations | Contributor(s): Shimeng Yu, Panni Wang

    Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...

  7. 12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications

    18 Sep 2020 | Online Presentations | Contributor(s): E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl

    In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].

  8. 47 Electrostatic Engineering in BaTiO3/β-Ga2O3 Heterostructure Field Effect Transistors

    14 Oct 2020 | Online Presentations | Contributor(s): Nidhin Kurian Kalarickal, Zhanbo Xia, Wyatt Moore, Joe McGlone, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

    We report on the design and demonstration of BaTiO3/β-Ga2O3 based lateral field effect transistors with superior breakdown performance. Utilizing the high-k low-k dielectric interface allows significant improvement in electrostatic field management giving a breakdown voltage of 1.1 KV at 5...