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Carrier Statistics Lab

Calculate the electron & hole density in semiconductors

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Archive Version 1.02
Published on 04 Mar 2009, unpublished on 10 Jun 2009
Latest version: 2.2. All versions

doi:10.4231/D3901ZF73 cite this

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Abstract

This is a simple tool that demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. This tool shows the dependence of carrier density, densisty of states and occupation factor on temperature and fermi level. User can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level, and temperature.

The tool is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.


Bug Fixes

Corrected the display of certain outputs.

Small Updates

Updated the Front pane of the tool with correct figures of the distributions.

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