Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

By Roger Lake

University of California, Riverside



Published on


The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate is retained. The electron-photon interaction is treated in the self-consistent first Born approximation (SCFBA). The Pauli-exclusion principle is taken into account exactly within the SFCBA. The retention of the energy coordinate allows the calculation of a number of quantities which give insight into the effect of inelastic scattering on electron transport: the effect of inelastic scattering on the occupation of the energy levels, the density of states, the energy distribution of the current density, and the power density is calculated from a quantum kinetic equation for actual device structures under high bias. The approach is used to study the effect of emitter quasi-bound states on the I-V characteristic of resonant tunneling diodes (RTD's) the effect of barrier asymmetry on the phonon-peak in RTD's, and energy balance and heat exchange in mescopic systems.


Roger Lake, Ph.D Thesis, Purdue University 1992.

Cite this work

Researchers should cite this work as follows:

  • Roger Lake (2008), "Application of the Keldysh Formalism to Quantum Device Modeling and Analysis,"

    BibTex | EndNote