Support

Support Options

Submit a Support Ticket

 

This section is unavailable in an archive version of a tool. Consult the latest published version 1.1.4 for most current information.

MuGFET

Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.1
Published on 24 Nov 2008, unpublished on 30 Oct 2009
Latest version: 1.1.4. All versions

doi:10.4231/D34J09X0Q cite this

This tool is closed source.

See also

No results found.

Category

Tools

Published on

Abstract

MuGFET is the simulation tool for nano-scale multi-gate FET structure MuGFET users can either use the PROPHET or the PADRE tools which provide self-consistent solutions to the Poisson and drift-diffusion equation.

The tool is supported by a First Time User Guide.

At the nanometer scale quantum transport approaches that are based on a full 3D Poisson-Schroedinger solution like the nanowire Lab or the atomistically resolved Bandstructure Lab are needed to provide insight into transport[7]. However, for devices that are 10nm or larger semi-classical approaches can provide some significant insight. For device domains 30nm or larger, quantum approaches as implemented in today's simulators, may not contain enough physics of scattering and dephasing. Therefore there are some advantages in using classical simulation approaches over quantum simulation approaches for certain classes of device regimes. Drift and diffusion simulations are significantly faster than quantum ballistic simulations and also fairly well fitted the experimental results[4].

PROPHET is a PDE (partial differential equation) solver for 1, 2, or 3 dimension which is developed in AT&T Bell Laboratories as a process simulator[1]. Because of its capability of adopting new simulation modules to the core solver, it is used in various semiconductor device simulation.

PADRE is also developed in AT&T Bell Laboratories and a device-oriented simulator for 2D/3D device with arbitrary geometry[1]. It provides many useful plots for engineers and deep understanding of physics. Many options are provided with respect to the numerical methods and semiconductor device physics. The numerical methods in PADRE are extremely robust. It can include hot-carrier transport by solving energy balance equation. The velocity of carriers in the channel region is well fitted to the Monte Carlo simulation results[3].

MuGFET is user-friendly graphical user interface for users to simulate finFET and nanowire-FET structure using either PROPHET or PADRE. It provides a lot of useful plots such as subthreshold, DIBL, on/off current ratio, etc.

Various examples in this simulator is compared to the experimental results[4-6].

The tool is supported by a First Time User Guide.

Recent changes(version 1.1):

* Energy balance equation option included to understand hot carrier effect on transport

* Input sequence is changed for user’s convenience

(Device Type-Structure-Material-Environment-Simulator-Simulate)

* Gaussian doping profile upgraded to be more realistic

* Refined meshes

* Minor error fixed(sequence plot for one Vd in PADRE)

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.