Drift-Diffusion Lab

Simulate single semiconductor characteristics

Launch Tool

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Archive Version 1.0
Published on 04 Feb 2008, unpublished on 12 Feb 2008 All versions

doi:10.4231/D3251FJ88 cite this

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Abstract

This tool enables a user to understand the basic concepts of DRIFT and DIFFUSION of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias and both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

Sponsored by

NCN@Purdue

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck, Saumitra Raj Mehrotra, Abhijeet Paul (2021), "Drift-Diffusion Lab," https://nanohub.org/resources/semi. (DOI: 10.4231/D3251FJ88).

    BibTex | EndNote

Tags

  1. diffusion
  2. drift
  3. drift-diffusion
  4. Drift-Diffusion Lab
  5. excess carriers
  6. nanoelectronics
  7. NCN@Purdue Supported
  8. Padre
  9. transient