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Drift-Diffusion Lab

Simulate single semiconductor characteristics

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.4
Published on 18 Jun 2009, unpublished on 10 Jul 2009
Latest version: 1.8.3. All versions

doi:10.4231/D32Z12P31 cite this

This tool is closed source.

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Abstract

This tool enables a user to understand the basic concepts of DRIFT and DIFFUSION of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias and both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.
    Improvements / modifications in subsequent version releases:
  • 1.4 -Changed penetration depth for light shine at the edge. Thin penetration is allowed now.
  • 1.32 -Changed penetration depth for light shine at the edge. Thin penetration is allowed now.
  • 1.131 -Fixed for minor error in meshing. Accurate definition of mesh with light shine option.
  • 1.13 - Fixed for error in Surface Recombination Velocity (cm/s) at the contacts and added another tab to for it. Recombination velocity can now be defined for electrons and holes and at both contacts separately.
  • 1.11 -Added Surface Recombination Velocity (cm/s) in input deck .
  • 1.1 - Updated for GUI. Carrier Generation Rate (/cm2/s) with light shine is user defined. Added Current density in output plot J(x)
  • 1.0 - 1D linear Drift-Diffusion simulator launched.

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