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By Gerhard Klimeck1, Akira Matsudaira2, Shaikh S. Ahmed3, Dragica Vasileska4, Saumitra Raj Mehrotra1, Xufeng Wang1

1. Purdue University 2. University of Illinois at Urbana-Champaign 3. Southern Illinois University Carbondale 4. Arizona State University

Capacitance of a MOS device

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Version 1.7 - published on 22 Apr 2010

doi:10.4231/D3TM72116 cite this

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First-Time User Guide View All Supporting Documents, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.