capacitance of a MOS device

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Archive Version 1.0
Published on 02 Nov 2005, unpublished on 23 Jul 2008 All versions

doi:10.4231/D32Z12P2J cite this



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MOSCap simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual -gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. Among the quantities simulated, the low and high -frequency capacitance-voltage (CV) characteristics and various spatial profiles (energy band, vertical electric field, charge densities etc.) are of special importance.

MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Akira Matsudaira; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska (2014), "MOSCap," (DOI: 10.4231/D32Z12P2J).

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