capacitance of a MOS device

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Archive Version 1.2
Published on 28 Jul 2008, unpublished on 03 Oct 2008 All versions

doi:10.4231/D3WM13S9P cite this



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The primary reason to study the Metal-Oxide-Silicon (MOS) capacitor is to understand the principle of operation as well as the detailed analysis of the Metal-Oxide-Silicon Field Effect Transistor(MOSFET).

MOSCap simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual -gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. Among the quantities simulated, the low and high -frequency capacitance-voltage (CV) characteristics and various spatial profiles (energy band, vertical electric field, charge densities etc.) are of special importance.

To better understand the operation of a MOS Capacitor, we provide brief tutorials and some typical exercises that will help in understanding the operation of MOS Capacitors from a semiclassical viewpoint. If one is interested on the Quantum-Mechanical description of the charge in the channel in MOS Capacitors please use the SCHRED tool.

  • Tutorial on MOS Capacitors Operation
  • Tutorial on MOS Capacitors Modeling with PADRE
  • Exercises for MOS Capacitors that Utilize PADRE
  • MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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    PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

    Cite this work

    Researchers should cite this work as follows:

    • Akira Matsudaira; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska (2014), "MOSCap," (DOI: 10.4231/D3WM13S9P).

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