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By Akira Matsudaira1, Shaikh S. Ahmed2, Gerhard Klimeck3, Dragica Vasileska4

1. University of Illinois at Urbana-Champaign 2. Southern Illinois University Carbondale 3. Purdue University 4. Arizona State University

capacitance of a MOS device

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Archive Version 1.3
Published on 03 Oct 2008, unpublished on 09 Jul 2009
Latest version: 1.8. All versions

doi:10.4231/D39C6S07W cite this

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The primary reason to study the Metal-Oxide-Silicon (MOS) capacitor is to understand the principle of operation as well as the detailed analysis of the Metal-Oxide-Silicon Field Effect Transistor(MOSFET).

MOSCap simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual -gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. Among the quantities simulated, the low and high -frequency capacitance-voltage (CV) characteristics and various spatial profiles (energy band, vertical electric field, charge densities etc.) are of special importance.

To better understand the operation of a MOS Capacitor, we provide brief tutorials and some typical exercises that will help in understanding the operation of MOS Capacitors from a semiclassical viewpoint. If one is interested on the Quantum-Mechanical description of the charge in the channel in MOS Capacitors please use the SCHRED tool.

  • Tutorial on MOS Capacitors Operation
  • Tutorial on MOS Capacitors Modeling with PADRE
  • Exercises for MOS Capacitors that Utilize PADRE
  • MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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    PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

    Cite this work

    Researchers should cite this work as follows:

    • Akira Matsudaira; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska (2014), "MOSCap," (DOI: 10.4231/D39C6S07W).

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    Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.