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- The primary reason to study Metal-Oxide-Silicon (MOS) capacitors is to understand the principle of operation as well as the detailed analysis of the Metal-Oxide-Silicon Field Effect Transistor(MOSFET).
MOSCap simulates the one-dimensional electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures along the growth direction as a function of device size, geometry, oxide charge, temperature, doping concentration, and applied frequency. Among the quantities simulated, the low and high-frequency capacitance-voltage (CV) characteristics and various spatial profiles (e.g., energy band, vertical electric field, charge densities etc.) are of special importance.
- MOSCap also has an option for Surface Potential plot. It analytically gives the relation between applied gate potential and the semiconductor surface potential.
To better understand the operation of a MOS capacitor, we provide brief tutorials and some typical exercises. These resources are meant to help increase comprehension of the operation of MOS capacitors from a semi-classical viewpoint. For a quantum-mechanical description of the charge in a MOS capacitor channel, please use the SCHRED tool.
- MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.
- Improvements / modifications in subsequent version releases:
PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.
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