MOSFet

By Shaikh S. Ahmed1; Saumitra Raj Mehrotra2; SungGeun Kim2; Matteo Mannino2; Gerhard Klimeck2; Dragica Vasileska3; Xufeng Wang2; Himadri Pal2; Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.9.1 - published on 06 Dec 2017

doi:10.4231/D34T6F54G cite this

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Versions

Version Released DOI Handle Published
1.9.1 06 Dec 2017 doi:10.4231/D34T6F54G yes
1.9 21 Feb 2017 doi:10.4231/D31C1TH08 no
1.8.8 06 Oct 2016 doi:10.4231/D37659G84 no
1.8.7 29 Jul 2014 doi:10.4231/D3Q23R14Z no
1.8.6 07 Jan 2014 doi:10.4231/D3WW7704N no
1.8.5 01 Nov 2011 doi:10.4231/D30V89G8N no
1.8.4 21 Sep 2011 doi:10.4231/D3000005J no
1.8.3 14 Sep 2011 doi:10.4231/D37H1DM59 no
1.8.2 08 Sep 2011 doi:10.4231/D3RF5KF63 no
1.8.1 12 Apr 2011 doi:10.4231/D3M61BP7N no
1.8 03 Jan 2011 doi:10.4231/D3S756K0P no
1.7 30 Nov 2010 doi:10.4231/D3B56D44X no
1.6 03 Nov 2010 doi:10.4231/D3NK3649N no
1.5 31 Mar 2010 doi:10.4231/D3WM13T2R no
1.4 13 Jul 2009 doi:10.4231/D32V2C916 no
1.3.1 23 Jun 2009 doi:10.4231/D3K06X109 no
1.3 10 Jun 2009 doi:10.4231/D33X83K3Q no
1.2.2 21 Jan 2009 doi:10.4231/D3NC5SC1N no
1.22 27 Oct 2008 doi:10.4231/D3QF8JJ3D no
1.21 17 Oct 2008 doi:10.4231/D3RF5KF44 no
1.2 16 Oct 2008 doi:10.4231/D30Z70W41 no
1.11 06 Oct 2008 doi:10.4231/D31Z41S3S no
1.1 11 Feb 2008 doi:10.4231/D3TD9N73K no
1.0 07 Oct 2005 doi:10.4231/D3Z60C178 no