By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, SungGeun Kim2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.9.1 - published on 06 Dec 2017

doi:10.4231/D34T6F54G cite this

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824 Will it be possible to separate the variable “Source/Drain Doping Concentration” into two different variables?
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34 use interactive 2d potential viewer
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