This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.
PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.