By Matteo Mannino1, Shaikh S. Ahmed2, Gerhard Klimeck1, Dragica Vasileska3, Xufeng Wang1, Himadri Pal1, Gloria Wahyu Budiman1

1. Purdue University 2. Southern Illinois University Carbondale 3. Arizona State University

Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)

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Archive Version 1.3
Published on 10 Jun 2009, unpublished on 23 Jun 2009
Latest version: 1.9. All versions

doi:10.4231/D33X83K3Q cite this

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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).

MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.

Teachnig Material and Exercises:

MOSFET Operation Description

MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization

SOI Exercise: Basic Operation of n-channel SOI Device

Added Features: Version 1.3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish

MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Matteo Mannino; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska; Xufeng Wang; Himadri Pal; Gloria Wahyu Budiman (2017), "MOSFet," (DOI: 10.4231/D33X83K3Q).

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