The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET). MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. Teachnig Material and Exercises:

• MOSFET Operation Description
• MOSFET Exercise: Long channel vs. short channel device
• MOSFET Exercise: DIBL effect in short channel devices
• MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization
• SOI Exercise: Basic Operation of n-channel SOI Device

Upgrades with subsequent versions:

• 1.6: Added Surface Charge-Vg plot for NMOS and PMOS.

• 1.5: Improved meshing for Imapct Ionization simulations.

• 1.4: Fixed axes units. Added option for Energy balance transport

• 1.3.1: Added status bar for running simulation.

• 1.3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish

MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Researchers should cite this work as follows:

• Matteo Mannino, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Saumitra Raj Mehrotra, Gloria Wahyu Budiman (2017), "MOSFet," https://nanohub.org/resources/mosfet. (DOI: 10.4231/D3NK3649N).

  BibTex | EndNote

1. ACUTE
2. drift-diffusion
3. MOSFET
4. nanoelectronics
5. NCN@Purdue Supported
6. NCN Transistor @ 75
7. Padre