PN Junction: Long-Base Depletion Approximation

By Nahil Sobh1, Mohamed Mohamed1

1. University of Illinois at Urbana-Champaign

Depletion Approximation for a PN Junction

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Archive Version 2.0
Published on 08 Sep 2008, unpublished on 15 Jan 2009
Latest version: 2.5a. All versions

doi:10.4231/D3SJ19Q66 cite this

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Abstract

The PN Junction: Long-Base Depletion Approximation tool is used to approximately calculate and then graph the distribution in an p- and n-type junction of:

Charge Density Electric Field Intensity Electrostatic Potential Excess Carrier Concentration Current Density Current Density Amplitude Depletion Width Max Excess Hole Concentration Max Excess Electrons Concentration Junction Capacitance

References

  • Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
  • GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
  • For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
  • The permittivity of semicondutors are given in:
    http://www.iue.tuwien.ac.at/phd/palankovski/node32.html

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh; Mohamed Mohamed (2014), "PN Junction: Long-Base Depletion Approximation," https://nanohub.org/resources/pnlongbasedda. (DOI: 10.4231/D3SJ19Q66).

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