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Illinois Tools: NP Junction: Long-Base Depletion Approximation
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Abstract
The NP Junction: Long-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of :
- Charge Density
- Electric Field Intensity
- Electrostatic Potential
- Excess Carrier Concentration
- Current Density
- Current Density Amplitude
- Depletion Width
- Max Excess Hole Concentration
- Max Excess Electrons Concentration
- Junction Capacitance
- 1 / C^2
References
- Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
- GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
- For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition
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