NP Junction: Long-Base Depletion Approximation

By Nahil Sobh1, Mohamed Mohamed1

1. University of Illinois at Urbana-Champaign

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Archive Version 2.0
Published on 08 Sep 2008
Latest version: 2.0b. All versions

doi:10.4231/D3J38KH1D cite this

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Abstract

The NP Junction: Long-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of :
  • Charge Density
  • Electric Field Intensity
  • Electrostatic Potential
  • Excess Carrier Concentration
  • Current Density
  • Current Density Amplitude
  • Depletion Width
  • Max Excess Hole Concentration
  • Max Excess Electrons Concentration
  • Junction Capacitance
  • 1 / C^2

References

  • Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
  • GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide
  • For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition

Cite this work

Researchers should cite this work as follows:

  • Nahil Sobh; Mohamed Mohamed (2014), "NP Junction: Long-Base Depletion Approximation," https://nanohub.org/resources/nplongbasedda. (DOI: 10.4231/D3J38KH1D).

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