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Analytic Spin Precession Simulator

By Jing Xu1, Ian Appelbaum1

1. University of Delaware

Simulate spin precession effect in pure silicon

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Archive Version 1.0
Published on 18 Aug 2008
Latest version: 1.1. All versions

doi:10.4231/D3NZ80P8J cite this

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Spin precession and dephasing (Hanle effect) provides an umbiguous means to establish the presence of spin transport in semiconductors. Analytic spin precession simulator simulates Hanle effect in linear band pure silicon spin transport device with the presence of a perpendicular magnetic field.

Spin diffusion-drift equation is used to provide an analytical transit time distribution of electrons. Final signal received at detector side is plotted as a function of perpendicular magnetic field intensity. Use this tool to understand the effects of oblique magnetization, injector/detector magnetization flipping and tilting on spin precession.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.