2008 NCN@Purdue Summer School: Electronics from the Bottom Up

By Muhammad A. Alam1, Supriyo Datta1, Mark Lundstrom1

1. Purdue University



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The field of semiconductor microelectronics is undergoing a transformation to nanoelectronics. This transformation has been largely driven by a “top-down” approach that extends concepts and techniques originally developed for bulk semiconductors and large device to the new field of nanoscale device technology. But to exploit the opportunities that nanoscience presents, engineers will need to learn how to think about materials, devices, circuits, and systems in a new way to complement traditional, top-down understanding with new, “bottom-up” perspectives.

Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale.

For more information, see Electronics From the Bottom Up.

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Researchers should cite this work as follows:

  • Muhammad A. Alam, Supriyo Datta, Mark Lundstrom (2008), "2008 NCN@Purdue Summer School: Electronics from the Bottom Up," https://nanohub.org/resources/5305.

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Purdue University, West Lafayette, IN


In This Workshop

  1. Nanoelectronics and the Meaning of Resistance

    20 Aug 2008 | Courses | Contributor(s): Supriyo Datta

    The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics. Day 1: What...

  2. Physics of Nanoscale MOSFETs

    26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

  3. Introductory Comments

    29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

  4. Percolation Theory

    03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

    The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...