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By Muhammad A. Alam1, Supriyo Datta1, Mark Lundstrom1
1. Purdue University
View Workshop Series
5.0 out of 5 stars
03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...
0.0 out of 5 stars
29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Physics of Nanoscale MOSFETs
3.5 out of 5 stars
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...
Nanoelectronics and the Meaning of Resistance
20 Aug 2008 | Courses | Contributor(s): Supriyo Datta
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics.Day 1: What and where...