|Lecture Number/Topic||Online Lecture||Video||Lecture Notes||Supplemental Material||Suggested Exercises|
|Introduction: Physics of Nanoscale MOSFETs||View Flash||View||Notes|
|Lecture 1: Review of MOSFET Fundamentals||View Flash||View||Notes||Exercises|
|A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...
|Lecture 2: Elementary Theory of the Nanoscale MOSFET||View Flash||View||Notes||Exercises|
|A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
|Lecture 3A: The Ballistic MOSFET||View Flash||View||Notes||Exercises|
|The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
|Lecture 3B: The Ballistic MOSFET||View Flash||View||Notes||Exercises|
|This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
|Lecture 4: Scattering in Nanoscale MOSFETs||View Flash||View||Notes||Exercises|
|No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
|Lecture 5: Application to State-of-the-Art FETs||View Flash||View||Notes||Exercises|
|The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
|Lecture 6: Quantum Transport in Nanoscale FETs||View Flash||View||Notes|
|The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...
|Lecture 7: Connection to the Bottom Up Approach||View Flash||View||Notes|
|While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
|Notes on Fermi-Dirac Integrals (3rd Edition)||notes_on_FD_integral3rdEd_revised_080411.pdf
|Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic...