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Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

By Mark Lundstrom1, Xingshu Sun1

1. Purdue University

Published on


These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning 1. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret 2.) The objective is to understand how to treat MOS electrostatics without making the δ-depletion approximation.


Used in ECE 612 Nanoscale Transistors

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