This presentation illustrates several points. First, it is shown that in nanoscale devices there is less degradation due to heating effects due to non-stationary nature of the carrier transport (velocity overshoot) in the device, which, in turn, makes less probable the interaction with phonons. Second, it is shown that degradation can further be reduced if using Silicon on Diamond devices. Third, it is quantitatively demonstrated that dual gate devices are better from a thermal perspective because for the same amount of degradation as single gate devices onehas 1.5-1.7 times more current drive.
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