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MOSCap: First-Time User Guide

By SungGeun Kim1, Benjamin P Haley1, Gerhard Klimeck1

1. Purdue University

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This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. We also provide some basic definitions in this document.

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  1. Dragica Vasileska (2008), "MOS Capacitors Description"
  2. Dragica Vasileska (2008), "MOSFET Operation Description"
  3. Mark Lundstrom (2008), "ECE 612 Lecture 3: MOS Capacitors"
  4. S.-H. Lo, et. al., IBM Journal of Research and Development, volume 43, number 3, 1999
  5. Deal B. E., Electron Devices, IEEE Transactions on, 1980
  6. Dragica Vasileska; Gerhard Klimeck (2006), "Padre," DOI: 10254/nanohub-r941.3.

Cite this work

Researchers should cite this work as follows:

  • SungGeun Kim; Benjamin P Haley; Gerhard Klimeck (2009), "MOSCap: First-Time User Guide,"

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.