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CNT Mobility
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
Launch Tool
Archive Version 1.0
Published on 20 Jan 2010 All versions
doi:10.4231/D3599Z17M cite this
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Abstract
CNT Mobility simulates the field effect carrier mobility in back-gated CNT-FET devices at low field. The model is based on calculating the mean free paths with respect to several scattering mechanisms and multi-band transport.
Credits
Yang Zhao, Albert Liao, Eric Pop
Publications
Multiband Mobility in Semiconducting Carbon Nanotubes
Y. Zhao, A. Liao, E. Pop, IEEE Elec. Device Lett. 30, 1078 (2009)
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