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This section is unavailable in an archive version of a tool. Consult the latest published version 1.1 for most current information.

CNT Mobility

By Yang Zhao1, Albert Liao1, Eric Pop1

1. University of Illinois at Urbana-Champaign

Simulate field effect carrier mobility in back-gated CNTFET devices at low field

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Archive Version 1.0
Published on 20 Jan 2010
Latest version: 1.1. All versions

doi:10.4231/D3599Z17M cite this

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Abstract

CNT Mobility simulates the field effect carrier mobility in back-gated CNT-FET devices at low field. The model is based on calculating the mean free paths with respect to several scattering mechanisms and multi-band transport.

Tags

  1. carbon nanotubes
  2. CNTFET
  3. FET
  4. Illinois
  5. mobility
  6. mobility modeling
  7. nanoelectronics
  8. phonons

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