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RTD with NEGF Demonstration: Basic RTD Asymmetric

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN



Published on


This video shows the analysis of a 2 barrier Resonant Tunneling Diode (RTD) over 21 bias points using Resonant Tunneling Diode Simulation with NEGF. Several powerful features of this tool are demonstrated, including the following:

  • initial simulation with a Thomas-Fermi potential
  • plotting the conduction band with resonances and Fermi level
  • sweeping the conduction band plot across applied bias points, observing the changes in conduction band and Fermi level and new resonances as voltage increases
  • sweeping plot of transmission coefficient vs. energy across applied voltages
  • plotting I-V curve
  • running another simulation with a Hartree potential
  • plotting spatial profile of charge density and doping density along the device
  • sweeping the charge density plot across applied voltages and showing how the charge density changes as bias increases, for both potential models (Thomas-Fermi and Hartree)
  • juxtaposition of I-V curves for both potential models
  • running another simulation with a Hartree potential and increasing the width of one barrier
  • adding the I-V curve for the wider barrier simulation to the previous I-V curves

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Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck (2009), "RTD with NEGF Demonstration: Basic RTD Asymmetric,"

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