RTD with NEGF Demonstration: Basic RTD Asymmetric
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Abstract
This video shows the analysis of a 2 barrier Resonant Tunneling Diode (RTD) over 21 bias points using Resonant Tunneling Diode Simulation with NEGF. Several powerful features of this tool are demonstrated, including the following:
- initial simulation with a Thomas-Fermi potential
- plotting the conduction band with resonances and Fermi level
- sweeping the conduction band plot across applied bias points, observing the changes in conduction band and Fermi level and new resonances as voltage increases
- sweeping plot of transmission coefficient vs. energy across applied voltages
- plotting I-V curve
- running another simulation with a Hartree potential
- plotting spatial profile of charge density and doping density along the device
- sweeping the charge density plot across applied voltages and showing how the charge density changes as bias increases, for both potential models (Thomas-Fermi and Hartree)
- juxtaposition of I-V curves for both potential models
- running another simulation with a Hartree potential and increasing the width of one barrier
- adding the I-V curve for the wider barrier simulation to the previous I-V curves
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NCN@Purdue
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