This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated, including the following:
- spatial profiles of the equilibrium energy bands and doping levels along the device length
- spatial profiles along the device length of quantities which are shown to vary as the applied bias changes including energy bands, electric field, and net charge density
- changing the N-type doping and running new simulations
- comparing output results from separate simulations with different N-type doping levels including energy bands, electric field, and net charge density. The asymmetric doping can be seen to result in an asymmetric built-in field, bandedge profile, and charge distribution.